收藏本站
Typical Characteristics
STARTING T J = 25 C
STARTING T J = 150 C
4000
1000
100
10
LIMITED
BY PACKAGE
10us
100us
500
100
10
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
o
o
1
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
TJ = MAX RATED
1ms
10ms
LIMITED BY rDS(on) o
DC
0.1
1
TC = 25 C
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
0.1 1 10 100
t AV , TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
C apability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 10V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
120
80
40
V DD = 5V
T J = 175 o C
T J = 25 o C
T J = -55 o C
120
80
40
V GS = 5V
V GS = 4.5V
V GS = 4V
0
2.0
2.5 3.0 3.5 4.0 4.5
V GS , GATE TO SOURCE VOLTAGE (V)
5.0
0
0
1 2 3 4
V DS , DRAIN TO SOURCE VOLTAGE (V)
5
Figure 7. Transfer Characteristics
50
Figure 8. Saturation Characteristics
1.8
40
30
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
1.6
1.4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
20
T J = 25 o C
1.0
10
0.8
I D = 80A
0
4
5
6 7 8 9
10
0.6
-80
V GS = 10V
-40 0 40 80 120 160
200
V GS , GATE TO SOURCE VOLTAGE ( V )
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
T J , JUNCTION TEMPERATURE ( o C )
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8442 Rev. C0
5
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB8443 MOSFET N-CH 40V 120A TO-263AB
FDB8444 MOSFET N-CH 40V 70A TO-263AB
FDB8445 MOSFET N-CH 40V 70A D2PAK
FDB8447L MOSFET N-CH 40V 15A D2PAK
FDB8453LZ MOSFET N-CH 40V 16.1A TO-263AB
FDB86102LZ MOSFET N-CH 100V 30A D2PAK
FDB86135 MOSFET N-CH 100V D2PAK
FDB8832 MOSFET N-CH 30V 80A D2PAK
相关代理商/技术参数
FDB8442_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m??
FDB8442_F085 功能描述:MOSFET 40V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8443 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8443_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.0m??
FDB8443_F085 功能描述:MOSFET 40V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m??
FDB8444_F085 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube